﻿@ARTICLE{first1,
    author = {Simmons, J. G.  and Verderber, R. R. },
    title = {New Conduction and Reversible Memory Phenomena in Thin Insulating Films},
    journal = {Proceedings of the royal society A},
    year = {1967},
    volume={301},
    pages={77 - 102},}


@ARTICLE{first2,
    author={Varker, C. J. and Juleff, E. M.},
    journal={Proceedings of the IEEE},
    title={Electron beam recording in {SiO2} with direct read-out using the electron beam induced current at a p-n junction},
    year={1967},
    volume={55},
    number={5},
    pages={ 728 - 729},
    }

@INPROCEEDINGS{fab1,
author={Zhuang, W.W. and others},
booktitle={Electron Devices Meeting, 2002. IEDM '02. International},
title={Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)},
year={2002},
pages={193 -196},
}

@INPROCEEDINGS{fab2,
author={Baek, I.G. and others},
booktitle={Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International},
title={Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses},
year={2004},
pages={ 587 - 590},
}

@INPROCEEDINGS{CuOx,
author={Tzu-Ning Fang and others},
booktitle={Electron Devices Meeting, 2006. IEDM '06. International},
title={Erase Mechanism for Copper Oxide Resistive Switching Memory Cells with Nickel Electrode},
year={2006},
pages={1 -4},
keywords={Cu-Cu2O-Ni;copper oxide resistive switching memory cells;erase mechanism;metal-insulator-metal device;nickel electrode;top electrode interface;MIM devices;copper;copper compounds;electrodes;nickel;thermal insulating materials;},
doi={10.1109/IEDM.2006.346731},
ISSN={},}

@INPROCEEDINGS{WOx,
author={ChiaHua Ho and others},
booktitle={Electron Devices Meeting (IEDM), 2010 IEEE International},
title={9nm half-pitch functional resistive memory cell with <1uA programming current using thermally oxidized sub-stoichiometric WOx film},
year={2010},
volume={},
number={},
pages={19.1.1 -19.1.4},
keywords={functional resistive memory cell;half-pitch functional transition-metal-oxide based resistive random access memory cell;low power non-volatile memory;nano injection lithography technique;programming current;size 9 nm;thermally oxidized sub-stoichiometric film;low-power electronics;nanolithography;random-access storage;stoichiometry;},
doi={10.1109/IEDM.2010.5703389},
ISSN={0163-1918},}


@INPROCEEDINGS{HfOx,
author={Chen, Y.S. and others},
booktitle={Electron Devices Meeting (IEDM), 2009 IEEE International},
title={Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity},
year={2009},
volume={},
number={},
pages={1 -4},
keywords={highly scalable hafnium oxide memory;pulse width;read disturb immunity;resistance random access memory;resistive distribution;time 40 ns;verification methods;hafnium compounds;random-access storage;},
doi={10.1109/IEDM.2009.5424411},
ISSN={},}

@INPROCEEDINGS{TiTa,
author={Hyung Dong Lee and others},
booktitle={VLSI Technology (VLSIT), 2012 Symposium on},
title={Integration of 4F2 selector-less crossbar array {2Mb ReRAM} based on transition metal oxides for high density memory applications},
year={2012},
month={june},
volume={},
number={},
pages={151 -152},
keywords={4F2 selector-less crossbar array;ReRAM test chip;TiOx-Ta2O5;high density memory;memory cell;read/write specifications;resistor spacer;resistor stack;row/column lines;size 54 nm;storage capacity 2 Mbit;transition metal oxides;microprocessor chips;random-access storage;resistors;tantalum compounds;titanium compounds;write-once storage;},
doi={10.1109/VLSIT.2012.6242506},
ISSN={0743-1562},}

@INPROCEEDINGS{TaOx,
author={Shyh-Shyuan Sheu and others},
booktitle={Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International},
title={A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability},
year={2011},
month={feb.},
volume={},
number={},
pages={200 -202},
keywords={MLC-access capability;embedded RRAM;embedded SLC resistive-RAM macro;read-write random-access time;single-level-cell RRAM macro;embedded systems;random-access storage;},
doi={10.1109/ISSCC.2011.5746281},
ISSN={0193-6530},}

@INPROCEEDINGS{TaOx433,
author={Kawahara, A. and others},
booktitle={Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International},
title={An 8Mb multi-layered cross-point ReRAM macro with 443MB/s write throughput},
year={2012},
month={feb.},
volume={},
number={},
pages={432 -434},
keywords={TaO;bidirectional diode;bipolar type cross-point cell array structure;bit rate 443 Mbit/s;current control;embedded memory;fast write operation;flash memory performance;hierarchical bitline structure;memory cell;memory size 8 MByte;multilayered cross-point ReRAM macro;nonvolatile memories;size 0.18 mum;sneak current;write throughput;embedded systems;flash memories;low-power electronics;random-access storage;tantalum compounds;},
doi={10.1109/ISSCC.2012.6177078},
ISSN={0193-6530},}

@ARTICLE{review_wong,
author={Wong, H.-S.P. and Heng-Yuan Lee and Shimeng Yu and Yu-Sheng Chen and Yi Wu and Pang-Shiu Chen and Byoungil Lee and Chen, F.T. and Ming-Jinn Tsai},
journal={Proceedings of the IEEE}, title={Metal-Oxide RRAM},
year={2012},
month={june },
volume={100},
number={6},
pages={1951 -1970},
keywords={binary metal-oxide resistive switching RRAM;binary metal-oxide resistive switching random access memory;large-scale RRAM arrays;metal-oxide RRAM;nonvolatile memory application;random-access storage;},
doi={10.1109/JPROC.2012.2190369},
ISSN={0018-9219},}



@ARTICLE{review_akina,
author={Akinaga, H. and Shima, H.},
journal={Proceedings of the IEEE}, title={Resistive Random Access Memory (ReRAM) Based on Metal Oxides},
year={2010},
month={dec. },
volume={98},
number={12},
pages={2237 -2251},
keywords={CMOS device;ReRAM technology;complementary metal-oxide-semiconductor;electrochemical effect;electronic effect;nonvolatile memories;resistive random access memory;CMOS integrated circuits;random-access storage;},
doi={10.1109/JPROC.2010.2070830},
ISSN={0018-9219},}

@INPROCEEDINGS{Unity,
author={Chevallier, C.J. and others},
booktitle={Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International},
title={A 0.13 um 64Mb multi-layered conductive metal-oxide memory},
year={2010},
month={feb.},
volume={},
number={},
pages={260 -261},
keywords={CMOS circuitry;NAND-compatible nonvolatile memory testchip;decoding;multilayered conductive metal-oxide memory;sensing technique;size 0.13 micron;CMOS memory circuits;NAND circuits;random-access storage;},
doi={10.1109/ISSCC.2010.5433945},
ISSN={0193-6530},}


@ARTICLE{jiale,
author={Liang, J. and Wong, H.-S.P.},
journal={Electron Devices, IEEE Transactions on},
title={Cross-Point Memory Array Without Cell Selectors - Device Characteristics and Data Storage Pattern Dependencies},
year={2010},
month={oct. },
volume={57},
number={10},
pages={2531 -2538},
keywords={I -V characteristics;cell selection devices;cross-point memory architecture;cross-point memory array;data storage pattern dependency;device characteristics;device density;interconnects;large-power dissipation;memory cell resistance value;parasitic resistance;resistance ratio;substantial sneak path leakages;write-read operations;interconnections;memory architecture;},
doi={10.1109/TED.2010.2062187},
ISSN={0018-9383},}


@inproceedings{Dimin_ISLPED,
 author = {Niu, Dimin and others},
 title = {Design trade-offs for high density cross-point resistive memory},
 booktitle = {Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design},
 series = {ISLPED '12},
 year = {2012},
 isbn = {978-1-4503-1249-3},
 location = {Redondo Beach, California, USA},
 pages = {209--214},
 numpages = {6},
 url = {http://doi.acm.org/10.1145/2333660.2333712},
 doi = {10.1145/2333660.2333712},
 acmid = {2333712},
 publisher = {ACM},
 address = {New York, NY, USA},
 keywords = {cross-point array, non-volatile memory, resistive memory},
}


@INPROCEEDINGS{harderror,
author={Chen, B. and Lu, Y. and Gao, B. and Fu, Y.H. and Zhang, F.F. and Huang, P. and Chen, Y.S. and Liu, L.F. and Liu, X.Y. and Kang, J.F. and Wang, Y.Y. and Fang, Z. and Yu, H.Y. and Li, X. and Wang, X.P. and Singh, N. and Lo, G.Q. and Kwong, D.L.},
booktitle={Electron Devices Meeting (IEDM), 2011 IEEE International}, title={Physical mechanisms of endurance degradation in TMO-RRAM},
year={2011},
month={dec.},
volume={},
number={},
pages={12.3.1 -12.3.4},
keywords={HfOx-TiOx-HfOx-TiOx;TMO based RRAM;endurance failure behaviors;physical mechanisms;physically-based optimized switching mode;resistive random access memory;transitional metal oxide;hafnium compounds;random-access storage;titanium compounds;},
doi={10.1109/IEDM.2011.6131539},
ISSN={0163-1918},}

@ARTICLE{softerror_gao,
author={Bin Gao and Haowei Zhang and Bing Chen and Lifeng Liu and Xiaoyan Liu and Ruqi Han and Jinfeng Kang and Zheng Fang and Hongyu Yu and Bin Yu and Dim-Lee Kwong},
journal={Electron Device Letters, IEEE}, title={Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory},
year={2011},
month={march },
volume={32},
number={3},
pages={276 -278},
keywords={bias-dependent failure probability;bipolar oxide-based resistive switching memory;failure time;nonvolatile storage;resistance transition;retention failure;temperature-acceleration;temperature-dependent failure probability;voltage-acceleration;integrated circuit modelling;random-access storage;},
doi={10.1109/LED.2010.2102002},
ISSN={0741-3106},}


@article{softerror_yu,
author = {Shimeng Yu and Yang Yin Chen and Ximeng Guan and H.-S. Philip Wong and Jorge A. Kittl},
collaboration = {},
title = {A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory},
publisher = {AIP},
year = {2012},
journal = {Applied Physics Letters},
volume = {100},
number = {4},
eid = {043507},
numpages = {4},
pages = {043507},
keywords = {dissolving; electrical resistivity; hafnium compounds; Monte Carlo methods; probability; random-access storage; reliability; stochastic processes; tunnelling},
url = {http://link.aip.org/link/?APL/100/043507/1},
doi = {10.1063/1.3679610}
}

@MISC{MICRO2011Keynote,
    title = {{A. Sodani. Race to Exascale: Opportunities and Challenges. Keynote talk \emph{of the 44th Annual IEEE/ACM International Symposium on Microarchitecture (MICRO)}, 2011.}}
}

@INPROCEEDINFS{MICRO2011Keynote2,
    author = {Sodani, A.},
    title = {Race to Exascale: Opportunities and Challenges},
    booktitle = {Keynote talk of the 44th Annual IEEE/ACM International Symposium on Microarchitecture},
    year = {2011},
}


@INPROCEEDINGS{Yaojun_DATE2012,
author={Y. Zhang and others},
booktitle={Design, Automation Test in Europe Conference Exhibition (DATE)},
title={Asymmetry of MTJ switching and its implication to STT-RAM designs},
year={2012},
pages={1313 -1318},
keywords={CMOS process compatibility;MTJ switching asymmetry;NMOS transistors;STT-RAM cell structures;STT-RAM design;asymmetric biasing conditions;design pessimism minimization;high integration density;magnetic tunneling junction device;nanosecond access time;next-generation nonvolatile memory technologies;reliability;spin-transfer torque random access memory;statistical design method;thermal-induced statistical MTJ magnetization process;write-pattern-dependent;CMOS memory circuits;MOSFET;integrated circuit reliability;magnetic tunnelling;random-access storage;statistical analysis;},
}



@inproceedings{Wujie_DAC2012,
 author = {Wen, Wujie and others},
 title = {PS3-RAM: a fast portable and scalable statistical STT-RAM reliability analysis method},
 booktitle = {Proceedings of the Design Automation Conference (DAC)},
 year = {2012},
 pages = {1191--1196},
 numpages = {6},
 keywords = {STT-RAM, process variation, reliability, thermal fluctuation},
}


@inproceedings{Park_DAC2012,
 author = {Park, S. and others},
 title = {Future cache design using {STT MRAM}s for improved energy efficiency: devices, circuits and architecture},
 booktitle = {Proceedings of the Design Automation Conference (DAC)},
 year = {2012},
 pages = {492--497},
 numpages = {6},
 keywords = {STT MRAM, cache, emerging devices, memory, spin},
}

@inproceedings{Jog_DAC2012,
 author = {Jog, Adwait and others},
 title = {Cache revive: architecting volatile STT-RAM caches for enhanced performance in CMPs},
 booktitle = {Proceedings of the Design Automation Conference (DAC)},
 year = {2012},
 pages = {243--252},
 numpages = {10},
 keywords = {STT-RAM, heterogeneous (hybrid) systems},
}
@inproceedings{Zhenyu_MICRO2011,
 author = {Sun, Zhenyu and others},
 title = {Multi retention level STT-RAM cache designs with a dynamic refresh scheme},
 booktitle = {Proceedings of the 44th Annual IEEE/ACM International Symposium on Microarchitecture (MICRO)},
 year = {2011},
 pages = {329--338},
 numpages = {10},
}

@inproceedings{Zhou_ICCAD2009,
 author = {Zhou, P. and others},
 title = {Energy reduction for {STT-RAM} using early write termination},
 booktitle = {Proceedings of the International Conference on Computer-Aided Design (ICCAD)},
 year = {2009},
 pages = {264--268},
 numpages = {5},
}


@inproceedings{Wu_ISCA2009,
 author = {Wu, X. and others},
 title = {Hybrid cache architecture with disparate memory technologies},
 booktitle = {Proceedings of the 36th annual international symposium on Computer architecture (ISCA)},
 year = {2009},
 pages = {34--45},
 numpages = {12},
 keywords = {hybrid cache architecture, three-dimensional ic},
}

@inproceedings{Rasquinha_ISLPED2010,
 author = {Rasquinha, M. and others},
 title = {An energy efficient cache design using spin torque transfer ({STT}) {RAM}},
 booktitle = {Proceedings of the international symposium on Low power electronics and design (ISLPED)},
 year = {2010},
 pages = {389--394},
 numpages = {6},
 keywords = {(STT)RAM, cache design, memory technologies},
}

@inproceedings{Xu_ICCAD2011,
 author = {Xu, C. and others},
 title = {Device-architecture co-optimization of {STT-RAM} based memory for low power embedded systems},
 booktitle = {Proceedings of the International Conference on Computer-Aided Design (ICCAD)},
 year = {2011},
 pages = {463--470},
 numpages = {8},
}

@inproceedings{Yaojun_ICCAD2011,
 author = {Zhang, Yaojun and Wang, Xiaobin and Chen, Yiran},
 title = {STT-RAM cell design optimization for persistent and non-persistent error rate reduction: a statistical design view},
 booktitle = {Proceedings of the International Conference on Computer-Aided Design (ICCAD)},
 year = {2011},
 pages = {471--477},
 numpages = {7},
}

@INPROCEEDINGS{Sony_IEDM2005,
author={Hosomi, M. and others},
booktitle={Proceedings of IEEE International Electron Devices Meeting (IEDM)},
title={A novel nonvolatile memory with spin torque transfer magnetization switching: {Spin-RAM}},
year={2005},
volume={},
number={},
pages={459 -462},
keywords={0.18 micron;100 nm;150 nm;CMOS process;magnetic field;magnetic moment;magnetic tunnel junctions;magnetization reversal;nonvolatile memory;spin torque transfer magnetization switching;spin-RAM;universal memory;low-power electronics;magnetic recording;magnetic tunnelling;magnetisation reversal;random-access storage;},
doi={10.1109/IEDM.2005.1609379},
ISSN={},}

@ARTICLE{Wang_JAP2008,
author={Wang, Xiaobin and others},
journal={Journal of Applied Physics},
title={Thermal fluctuation effects on spin torque induced switching: Mean and variations},
year={2008},
volume={103},
number={3},
pages={034507 -034507-4},
keywords={Fokker-Planck equation;current density;fluctuations;magnetic switching;},
doi={10.1063/1.2837800},
ISSN={0021-8979},}

@INPROCEEDINGS{Nigam_ISLPED2011,
author={Nigam, A. and others},
booktitle={Proceedings of the International Symposium on Low Power Electronics and Design (ISLPED)},
title={Delivering on the promise of universal memory for spin-transfer torque RAM (STT-RAM)},
year={2011},
pages={121 -126},
keywords={HSPICE;MTJ;SPEC CPU2006 benchmark;STT-RAM;ferromagnetic material;magnetic tunnel junction;spin-transfer torque RAM;universal memory;write-energy reduction techniques;SPICE;random-access storage;},
doi={10.1109/ISLPED.2011.5993623},
ISSN={Pending},}

@INPROCEEDINGS{Xu_DAC2009,
author={Wei Xu and others},
booktitle= {Proceedings of the Design Automation Conference (DAC)},
title={Improving STT MRAM storage density through smaller-than-worst-case transistor sizing},
year={2009},
pages={87 -90},
keywords={STT MRAM storage density;current threshold variability;magnetic tunneling junction;magnetoresistive random access memory;memory cell transistor sizing;nMOS transistor;size 45 nm;smaller-than-worst-case transistor sizing;spin-torque transfer;variability-induced storage density penalty;MOSFET;MRAM devices;},
doi={},
ISSN={0738-100X},}

@INPROCEEDINGS{Zhang_DATE2012,
author={Y. Zhang and others},
booktitle={Design, Automation Test in Europe Conference Exhibition (DATE)},
title={Asymmetry of {MTJ} switching and its implication to {STT-RAM} designs},
year={2012},
pages={1313 -1318},
keywords={CMOS process compatibility;MTJ switching asymmetry;NMOS transistors;STT-RAM cell structures;STT-RAM design;asymmetric biasing conditions;design pessimism minimization;high integration density;magnetic tunneling junction device;nanosecond access time;next-generation nonvolatile memory technologies;reliability;spin-transfer torque random access memory;statistical design method;thermal-induced statistical MTJ magnetization process;write-pattern-dependent;CMOS memory circuits;MOSFET;integrated circuit reliability;magnetic tunnelling;random-access storage;statistical analysis;},
doi={},
ISSN={1530-1591},}


@INPROCEEDINGS{Lin_IEDM2009,
author={Lin, C.J. and others},
booktitle={Proceedings of IEEE International Electron Devices Meeting (IEDM)},
title={45nm low power {CMOS} logic compatible embedded {STT MRAM} utilizing a reverse-connection {1T/1MTJ} cell},
year={2009},
month={dec.},
volume={},
number={},
pages={1 -4},
keywords={Cu/low-k BEOL;complementary metal-oxide-semiconductor;embedded memory macros;endurance;low power CMOS logic;low power transistors;random access memory;read disturb;reliability;reverse connection;size 45 nm;spin transfer torque MRAM;thermal stability;CMOS logic circuits;MRAM devices;low-power electronics;},
doi={10.1109/IEDM.2009.5424368},
ISSN={},}
